A semiconductor device and its forming method, the method includes forming a semiconductor device: providing a semiconductor substrate, a semiconductor substrate is formed on the surface of the insulating layer, the insulating layer having an opening therein through its thickness, and insulating polycrystalline silicon electrode layer formed in the opening of a flush surface; covering the semiconductor substrate and polysilicon electrodes the surface layer of aluminum film; forming a metal layer covering the aluminum film; the structure of the metal layer is formed after annealing, the aluminum film of aluminum into the opening at the bottom instead of polysilicon electrode layer, forming an aluminum layer in the surface of the semiconductor substrate, and a polysilicon electrode layer of polysilicon is transferred to the open top, and metal the reaction layer formed in the metal silicide layer on the surface of the aluminum layer; chemical mechanical polishing in the metal layer and the aluminum surface of the semiconductor substrate A film, a metal silicide layer, until the surface of the insulating layer is exposed. The performance of the formed semiconductor device is stable.
【技术实现步骤摘要】
【技术保护点】
一种半导体器件的形成方法，其特征在于，包括：提供半导体衬底，所述半导体衬底表面形成有绝缘层，所述绝缘层内具有贯穿其厚度的开口，所述开口内形成有与所述绝缘层表面齐平的多晶硅电极层；形成覆盖所述半导体衬底和多晶硅电极层表面的铝薄膜；形成覆盖所述铝薄膜的金属层；对形成金属层后的上述结构进行退火处理，使所述铝薄膜中的铝进入开口底部替代多晶硅电极层，形成位于所述半导体衬底表面的铝层，而多晶硅电极层中的多晶硅转移至开口顶部，并与金属层发生反应形成位于所述铝层表面的金属硅化物层；化学机械抛光位于所述半导体衬底表面的金属层、铝薄膜、金属硅化物层，直至暴露出所述绝缘层表面。
【技术特征摘要】
【专利技术属性】
技术研发人员：洪中山，
申请(专利权)人：中芯国际集成电路制造上海有限公司，
类型：发明
国别省市：
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