A semiconductor device and a method of manufacturing the same are provided. A semiconductor device includes: a first doped layer; a second doped layer, which is electrically with the first doped layer; a transparent insulating layer, the transparent insulating layer is positioned between the first doped layer and the second doped layer; a third doping layer, the third layer is in the transparent relative doping the other side of the insulating layer second doped layer, and electrically with the second doped layer opposite; and a conductive structure, the conductive structure through the second doping layer, the third doped layer and the transparent insulating layer to electrically couple the first doped layer and the the third doping layer.
【技术实现步骤摘要】
【技术保护点】
一种半导体装置，包括：一第一掺杂层；一第二掺杂层，其电性与所述第一掺杂层相同；一透明绝缘层，该透明绝缘层位于所述第一掺杂层与所述第二掺杂层之间；一第三掺杂层，该第三掺杂层位于相对该透明绝缘层的所述第二掺杂层的另一侧，且其电性与所述第二掺杂层相反；以及一导通结构，该导通结构贯穿所述第二掺杂层、所述第三掺杂层以及所述透明绝缘层，以电性耦合所述第一掺杂层以及所述第三掺杂层。
【技术特征摘要】
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