A semiconductor device, N type MOS transistor and manufacturing method thereof, wherein the semiconductor device includes a semiconductor substrate; the input / output devices are located in the region of the semiconductor substrate, a gate, a gate dielectric layer and the side wall; in the input / output device area of N type MOS transistor MOS transistor and P type semiconductor region in the substrate with low doped source / drain region and heavily doped source / drain region; fluoride ion n type semiconductor substrate MOS transistor region in the input / output device area within the implanted region. Accordingly, the invention also provides a method for manufacturing a semiconductor device, a n type MOS transistor and its manufacturing method, the N type MOS transistor region of low doped source / drain region is formed of fluorine ion implantation region into silicon fluoride fluoride and silicon groups form a semiconductor substrate within the area of fluoride ion implantation. Prevent the formation of charge traps, prevent the voltage under low doped source / drain region formed agglomeration charge, hot carrier effect.
【技术实现步骤摘要】
【技术保护点】
一种半导体器件的制作方法,其特征在于,包括如下步骤: 提供半导体衬底,半导体衬底包括高压器件区域,高压器件区域的半导体衬底上依次形成有栅介质层和栅极; 在高压器件区域的n型MOS晶体管区域的半导体衬底内进行低掺杂离子注入; 以栅介质层和栅极为掩膜,在高压器件区域的n型MOS晶体管区域的半导体衬底内进行氟离子注入; 进行快速热退火,在高压器件区域的n型MOS晶体管区域的半导体衬底内形成氟离子注入区和低掺杂源/漏区,所述氟离子注入区位于低掺杂源/漏区上方且 被其包围; 在高压器件区域的p型MOS晶体管区域的半导体衬底内进行低掺杂离子注入; 在高压器件区域的栅介质层和栅极两侧形成侧墙; 在高压器件区域的半导体衬底内形成重掺杂源/漏区。
【技术特征摘要】
【专利技术属性】
技术研发人员:赵猛,王津洲,
申请(专利权)人:中芯国际集成电路制造北京有限公司,
类型:发明
国别省市:11[中国|北京]
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