半导体发光装置制造方法及图纸

技术编号:4160465 阅读:192 留言:0更新日期:2012-04-11 18:40
本发明专利技术涉及“半导体发光装置”,属于半导体光电器件领域。半导体发光装置,包括集光反射杯和覆盖有荧光粉层的半导体发光芯片,其特征在于:集光反射杯与荧光粉层在光出射方向上不接触或接触部分不超过半导体发光芯片的高度,抑制了金属杯表面与荧光粉之间的多重反射,光在金属杯上反射产生的损耗降低,从而使本发明专利技术半导体发光装置的光取出效率得到提高。与常规的半导体发光装置的对比实验,证明本发明专利技术的光取出效率提高了20%左右。

Semiconductor light emitting device

The invention relates to a semiconductor light emitting device, which belongs to the field of semiconductor photoelectric devices. A semiconductor light emitting device, comprising a light collecting reflection cup and covered with the phosphor layer emitting semiconductor chip, which is characterized in that the light reflection cup and a phosphor layer in the light does not contact or contact part does not exceed the height direction of semiconductor light emitting chip, suppressing multiple reflections between the metal cup surface and fluorescent powders. To reduce the loss of light reflected in the metal cup, so that the invention of the semiconductor light-emitting device to improve light extraction efficiency. Compared with the conventional semiconductor light emitting device, it is proved that the light extraction efficiency of the present invention is increased by about 20%.

【技术实现步骤摘要】

【技术保护点】
半导体发光装置,包括集光反射杯和覆盖有荧光粉层的半导体发光芯片,其特征在于:集光反射杯与荧光粉层在光出射方向上不接触或接触部分不超过半导体发光芯片的高度。

【技术特征摘要】

【专利技术属性】
技术研发人员:王海嵩熊志军刘锐鲍鹏
申请(专利权)人:北京宇极科技发展有限公司
类型:发明
国别省市:11[中国|北京]

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