A nitride semiconductor element (100) comprises a P-type nitride semiconductor (101), a N-type nitride semiconductor (102), a nitride semiconductor quantum well luminescence structure (103), a substrate (104) and a buffer layer (105). The nitride semiconductor quantum well luminescence structure (103) is located between the P-type nitride semiconductor (101) and the N-type nitride semiconductor (102), and includes multiple well layers (103A) and multiple barrier layers (103B). Each well layer (103A) and each barrier layer (103B) are interlaced with each other. A plurality of barrier layers (103B) include a first barrier layer (103B1) disposed nearest to the position of P-type nitride semiconductor (101), a second barrier layer (103B2) disposed nearest to the position of N-type nitride semiconductor (102) and a plurality of third barrier layers (103B3). The thickness of the first barrier layer (103B1) is less than 100 A. Each third barrier layer (103B1) is located between two adjacent well layers (103A). The buffer layer (105) is located between the N-type nitride semiconductor (102) and the substrate (104).
【技术实现步骤摘要】
【国外来华专利技术】PCT国内申请，说明书已公开。
【技术保护点】
PCT国内申请，权利要求书已公开。
【技术特征摘要】
【国外来华专利技术】2016.08....
【专利技术属性】
技术研发人员：林宏诚，陈宗源，
申请(专利权)人：亿光电子工业股份有限公司，
类型：发明
国别省市：中国台湾,71
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