The invention discloses a kind of diamond carbon based film and its preparation method, in which the preparation method includes: Step 1, preparing the transition layer on the preset substrate surface; step 2, the graphite target is used as the sputtering target, through the Ar/H2, and the Cu DLC film layer is prepared on the surface of the transition layer according to the preset process parameters. The diamond-like carbon based carbon film and its preparation method, by doping copper to DLC, because copper itself does not bond with the C element, it is inlaid in the DLC film in the form of nanocrystalline particles. It plays a fine grain strengthening effect and improves the hardness of the film. Copper is a non bonding element, and the number of suspended bonds on the surface of the film is reduced to a certain extent. The surface energy is reduced, the angle of water droplet is raised and the hydrophobicity is enhanced. The copper itself has good ductility and is embedded in the DLC layer in the form of nanocrystalline. It can reduce the internal stress of the DLC film to a certain extent, improve the toughness, and reduce the surface roughness of the film layer and reduce the dynamic friction coefficient.
【技术实现步骤摘要】
一种类金刚石碳基薄膜及其制备方法
本专利技术涉及类金刚石碳基薄膜
,特别是涉及一种类金刚石碳基薄膜及其制备方法。
技术介绍
类金刚石碳基(Diamond-likecarbon,DLC)薄膜主要是由金刚石结构的SP3杂化碳原子和石墨结构的SP2杂化碳原子相互混杂的三维网络构成,是亚稳非晶态物质,具有高硬度、低摩擦系数、高热导率、低介电常数、宽带隙、良好光透过率、耐磨耐蚀以及生物相容性等,在航空航天、机械、电子、光学、装饰外观保护、生物医学等领域具有广阔的应用前景。非晶碳基薄膜一般分为含氢碳膜(a-C:H)和不含氢碳膜(a-C)两类。含氢碳膜(a-C:H)与不含氢碳膜(a-C)相比,由于掺氢后碳膜氢化,其透明度随氢含量增加而增加,可运用于对透明度及光学特性有要求的产品上,比如手机前后盖板、手表盖板、摄像头镜片等。而作为电子产品的盖板使用,其表面性能直接影响使用过程中的舒适度,如疏水性、防指纹性和动摩擦系数。而常规含氢DLC的表面水滴接触角只有70°左右,表现为亲水性,同时表面动摩擦系数大,容易粘指纹,直接使用手感差。因此,如何制备高疏水,低摩擦系数的DLC,提高DLC膜的防指纹效果和降低动摩擦系数,降低生产成本是大规模推广应用的前提和提高相应企业竞争力的保证。
技术实现思路
本专利技术的目的是提供了一种类金刚石碳基薄膜及其制备方法,获得具有高疏水性、防指纹的DLC薄膜。为解决上述技术问题,本专利技术实施例提供了一种类金刚石碳基薄膜制备方法,包括:步骤1,在预设的基板表面制备过渡层;步骤2,以石墨-铜靶为溅射靶材,通入Ar/H2,按照预设工艺参数在所述过渡层表 ...
【技术保护点】
一种类金刚石碳基薄膜制备方法,其特征在于,包括:步骤1,在预设的基板表面制备过渡层;步骤2,以石墨‑铜靶为溅射靶材,通入Ar/H2,按照预设工艺参数在所述过渡层表面制备Cu‑DLC薄膜层。
【技术特征摘要】
1.一种类金刚石碳基薄膜制备方法,其特征在于,包括:步骤1,在预设的基板表面制备过渡层;步骤2,以石墨-铜靶为溅射靶材,通入Ar/H2,按照预设工艺参数在所述过渡层表面制备Cu-DLC薄膜层。2.如权利要求1所述金属掺杂类金刚石碳基薄膜制备方法,其特征在于,所述过渡层为SiO2过渡层。3.如权利要求2所述金属掺杂类金刚石碳基薄膜制备方法,其特征在于,所述SiO2过渡层的厚度为5nm~15nm。4.如权利要求3所述金属掺杂类金刚石碳基薄膜制备方法,其特征在于,在所述步骤1之前,还包括:对所述基板表面进行去尘、去油清洁,获得干净表面。5.如权利要求4所述金属掺杂类金刚石碳基薄膜制备方法,其特征在于,在所述步骤2之后,还...
【专利技术属性】
技术研发人员:朱得菊,吴德生,陈立,
申请(专利权)人:信利光电股份有限公司,
类型:发明
国别省市:广东,44
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