The invention belongs to the field of micro nano fabrication technology, in particular to a method for producing large-area three-dimensional nano grid structure based on one-dimensional soft template nanoimprint lithography technology. The steps include making a first nanoimprint using a soft template, and then removing the residual layer of the imprinted ink by oxygen RIE etching. The substrate material is etched by using the embossed image, and a one-dimensional grating structure is obtained after removing the gel. Second imprint and etching processes are carried out using the same parameters as the previous imprint and etching process. In the second impression, adjust the direction of the template and the first impression, the direction of the template is 0 degrees -90 angle included. Finally, a three-dimensional nano grid structure with sub 25nm nano dots was obtained. The soft template used in the invention can effectively avoid the permanent damage caused by the contact between the hard template and the hard base, and simultaneously avoids the use of the three-dimensional template. The fabricated nanostructures are controllable in size and shape. The method of the invention has the advantages of low cost, high efficiency, good controllability and high resolution.
【技术实现步骤摘要】
本专利技术属于微纳米制造
,涉及基于一维软模板纳米压印技术制作三维纳 米网格结构的方法。
技术介绍
三维纳米结构在MEMS/NEMS、微/纳米流体器件、光子晶体、显示技术、衍射光学 等领域具有广阔的应用前景。在三维纳米结构制作技术方面,研究者们探索了多种光刻技 术,包括电子束直写技术、聚焦离子束光刻技术X射线光刻技术以及纳米压印技术。瑞士 保罗谢勒研究所的khleimitz等人采用控制不同曝光区域电子束曝光剂量的工艺,结合 热回流技术制作了一种三维结构的纳米压印模板(Schleunitz A5Schift H,"Fabrication of 3D nanoimprint stamps with continuousreliefs using dose-modulated electron beam lithography and thermal reflow", J. Micromech. Mecroeng. Vol. 20,2010, pp. 0950021-095002-6),但此方法工艺复杂、效率低、并且需要昂贵的电子束曝光设备。因 此,此方法不适合大面积三维纳米结构的制作。Morita等采用聚焦离子束技术在硬质基底 上直接制作出三维纳米结构(Morita T, Watanabe K, "Three-dimensional nanoimprint mold fabrication byfocused-ion-beam chemical vapor deposition", Jpn. J. Appli. Phys. 2003,pp. 3874- ...
【技术保护点】
1.一种基于一维软模板纳米压印技术制作三维纳米网格结构的方法,其特征包括以下步骤:(1)第一次纳米压印工艺:在基底上旋涂压印胶,利用一维软模板进行纳米压印,得出一维纳米光栅结构的压印胶图形,然后采用氧反应离子刻蚀技术去除压印残胶层;对于氧反应离子刻蚀技术,通过控制刻蚀参数得到不同线宽的压印胶图形;(2)第一次刻蚀工艺:以步骤(1)中去除残胶层的压印胶图形为掩膜刻蚀基底材料,刻蚀工艺为湿法刻蚀或者干法刻蚀工艺;去除残留压印胶掩模后得到基底材料的一维纳米光栅结构;(3)第二次纳米压印:利用与步骤(1)相同的工艺参数得到去除残胶层的一维纳米光栅结构压印胶图形,但软模板上的光栅线条方向和压印基底材料的一维纳米光栅结构上的光栅呈0°-90°间的任意角度;(4)第二次干法刻蚀:以去除残胶层的压印胶图形为刻蚀掩模,利用与步骤(2)相同的刻蚀工艺步骤得到具有亚25纳米尺寸纳米点的三维纳米网格结构。
【技术特征摘要】
【专利技术属性】
技术研发人员:褚金奎,孟凡涛,王志文,韩志涛,
申请(专利权)人:大连理工大学,
类型:发明
国别省市:91
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