The invention discloses a method for inducing crystal of Czochralski silicon single crystal, in which the rate deviation of inducing crystal is used to control the temperature of inducing crystal, and the rate deviation of inducing crystal is the difference between the average rate of inducing crystal and the set rate of inducing crystal in the period of regulating temperature of inducing crystal. If the speed deviation of the induced crystal is positive, the temperature of the induced crystal will be fine tuned in the positive direction; if the speed deviation of the induced crystal is negative, the temperature of the induced crystal will be fine tuned in the negative direction. According to the difference of shrinkage process, the control methods of crystal temperature include: there is only one continuous shrinking process in the whole process of crystal casting. During the whole process, the fine adjustment of the crystallization temperature is set according to the power adjustment coefficient; or the induced crystallization process is a non continuous shrinkage process, including the first shrinkage path, the fine grain process and the second shrinkage process, and the diameter of the reduction target is achieved by the second shrinkage process. In the process of equi fine grain, the temperature of primary crystallization is adjusted, and the fine adjustment of crystallization temperature is set according to the power regulation coefficient. The invention also discloses a production method of Czochralski silicon single crystal adopting the method of inducing crystal. The invention can accurately adjust the temperature of the induced crystal and improve the yield of the single crystal.
【技术实现步骤摘要】
直拉硅单晶的引晶方法及其制造方法
本专利技术属于单晶硅制造
,具体涉及一种直拉硅单晶的引晶方法,以及采用上述引晶方法制造直拉硅单晶的方法。
技术介绍
光伏发电作为绿色能源以及人类可持续发展的主要能源的一种,日益受到世界各国的重视并得到大力发展。单晶硅片作为光伏发电的基础材料的一种,有着广泛的市场需求。一种常见的单晶硅生长方法是直拉法,即,在单晶炉中,使籽晶浸入容置于坩埚的熔体,在转动籽晶及坩埚的同时提拉籽晶,以在籽晶下端依次进行引晶、放肩、转肩、等径及收尾,获得单晶硅棒。在硅单晶拉制过程中,当籽晶插入熔体时,由于籽晶和熔硅温差大,高温的熔硅对籽晶造成强烈的热冲击,籽晶头部产生大量位错。为了排除引出单晶中的位错,熔接完成后,开始进行缩颈(引细晶)。按照现有引晶工艺,通常缩颈到3-5mm,这样在冷却过程中热应力很小,不会产生位错,引晶长度120-150mm后可以进行放肩。引晶的关键在于引晶温度的控制,这直接关系到引晶成功与否以及拉晶的稳定性。现有技术中引晶时对调温过程的要求极高,主要依靠操作人员经验,并手动控制调温过程。这就导致调温过程存在不确定性,缺乏判定标准,难以保证单晶硅棒的稳定生产。
技术实现思路
本专利技术要解决的技术问题是:目前引晶调温过程对操作人员的技术熟练程度依赖性强,另外调温的结果还会受到单晶炉台型号差异的影响,难以准确调整温度,使得后期引晶、放肩、转肩、等径等过程温度不稳定,进而导致放肩、转肩、等径阶段头部掉包(断线),提高了拉晶成本,降低了单晶硅棒产 ...
【技术保护点】
1.直拉硅单晶的引晶方法,其特征在于,以引晶速度偏差调控引晶温度,所述引晶速度偏差为引晶调温周期内的平均引晶速度减去设定引晶速度所得的差值。/n
【技术特征摘要】
1.直拉硅单晶的引晶方法,其特征在于,以引晶速度偏差调控引晶温度,所述引晶速度偏差为引晶调温周期内的平均引晶速度减去设定引晶速度所得的差值。
2.根据权利要求1所述的直拉硅单晶的引晶方法,其特征在于,在所述引晶调温周期内,若引晶速度偏差为正,引晶温度正向微调;若引晶速度偏差为负,引晶温度负向微调。
3.根据权利要求2所述的直拉硅单晶的引晶方法,其特征在于,从引晶开始至达到引晶目标直径的过程为一连续缩径过程,在所述连续缩径过程中进行所述引晶温度的调控。
4.根据权利要求3所述的直拉硅单晶的引晶方法,其特征在于,所述连续缩径过程的引晶温度调控包含若干个引晶调温周期,在每一引晶调温周期内,引晶温度的微调量根据功率调节系数和引晶调温周期设定。
5.根据权利要求4所述的直拉硅单晶的引晶方法,其特征在于,所述连续缩径的目标直径范围为5-6mm,功率调节系数设定为0.0001-5.0000,引晶调温周期设定为300s-6000s。
6.根据权利要求2所述的直拉硅单晶的引晶方法,其特征在于,从引晶开始至达到引晶目标直径的过程为一非连续...
【专利技术属性】
技术研发人员:王正远,李侨,周锐,
申请(专利权)人:隆基绿能科技股份有限公司,
类型:发明
国别省市:陕西;61
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