存储装置及其制作方法、数据读写方法制造方法及图纸

本发明专利技术公开了一种存储装置及其制作方法及一种数据读写方法，该存储装置中的隧穿场效应晶体管包括：半导体衬底，位于半导体衬底表面的沟道、源区和漏区、势阱层、第一栅区和第二栅区，沟道具有在第一方向上彼此相对的第一表面和第二表面，在第二方向上彼此相对的第三表面和第四表面；源区覆盖第三表面，漏区覆盖第四表面，源区和漏区的掺杂类型不同；势阱层覆盖部分第一表面，并沿第二方向延伸覆盖至部分的势阱层背离沟道的表面，第一栅区覆盖部分第一表面，并沿第二方向延伸覆盖至部分的势阱层背离沟道的表面，第二栅区覆盖第二表面。该存储装置可靠性较高，可进行多次的读写操作。

Storage device and its manufacturing method, data reading and writing method

The invention discloses a storage device and a method for making a data reading and writing method. The tunneling field effect transistor in the storage device includes a semiconductor substrate, a channel, a source area and a leak area on the surface of a semiconductor substrate, a potential well layer, a first gate area and a second gate area. The channel has a relative relative to each other in the first direction. The first surface and the second surface, the third surface and the fourth surface relative to each other in the second direction; the source area covers the third surface, the leakage area covers the fourth surface, the source area and the leakage area are different, and the potential well layer covers the first surface, and extends along the second direction to the part of the potential well layer from the channel surface. The first gate area covers part of the first surface and extends along the second direction to cover part of the potential well layer away from the surface of the channel, and the second gate area covers the second surface. The storage device has high reliability and can read and write many times.

【技术实现步骤摘要】
【国外来华专利技术】PCT国内申请，说明书已公开。

【技术保护点】
PCT国内申请，权利要求书已公开。

【技术特征摘要】
【国外来华专利技术】PCT国内申请，...

【专利技术属性】
技术研发人员：徐挽杰，张臣雄，
申请(专利权)人：华为技术有限公司，
类型：发明
国别省市：广东,44