Test structure and test method of interconnection structure of minimum distance, including the test structure: the first test end, second test terminal and MOS transistor is located between the two; the test unit includes a first interconnect, a plurality of first and second parallel interconnect interconnect, interconnect second and the same number of third interconnect in second the interconnect surface of the conductive plug, the spacing between second different interconnects with the first interconnect different conductive plug surface with the same third of each test unit and the first interconnect spacing same second interconnect corresponding interconnects connected; the gate of a MOS transistor and the test unit the first interconnect electrical connection, third test end and the interconnection line connecting third. The test structure using the embodiment of the invention only needs to be tested once for each type of spacing, and can greatly reduce the test time, and the test is simple and convenient.
【技术实现步骤摘要】
【技术保护点】
一种互连结构最小间距的测试结构,其特征在于,包括:第一测试端、第二测试端和第三测试端,若干相同的MOS晶体管和若干相同的测试单元,所述测试单元与所述MOS晶体管一一对应;所述测试单元包括第一互连线、多个与所述第一互连线平行的第二互连线、与所述第二互连线数量相同的第三互连线,位于所述第二互连线表面的导电插塞,所述不同的第二互连线与第一互连线之间的间距各不相同,各个测试单元与第一互连线间距相同的第二互连线对应的导电插塞表面与同一第三互连线相连接;所述MOS晶体管的源极与第一测试端相连接,所述MOS晶体管的漏极与第二测试端相连接,所述MOS晶体管的栅极与所述测试单元的第一互连线电学连接,所述第三测试端与第三互连线相连接。
【技术特征摘要】
【专利技术属性】
技术研发人员:冯军宏,洪中山,甘正浩,
申请(专利权)人:中芯国际集成电路制造上海有限公司,
类型:发明
国别省市:
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