区熔晶体的自动生长方法及系统技术方案

本发明专利技术公开了一种区熔晶体的自动生长方法及系统，方法包括如下步骤：在自动扩肩生长阶段，当单晶的直径大于某层圆台形生长区间的下底面直径且小于上底面直径时，单晶所处的生长区间即为该层圆台形生长区间；单晶在所处的已配置生长参数的生长区间生长；其中，生长参数至少包括多晶下降速度和加热功率，分别按照已配置的函数关系调整使单晶按照所处的生长区间已配置的生长角度生长；其中，生长角度指的是圆台母线与下底面之间的夹角；当单晶的直径达到目标值时，切换至自动等径生长阶段，此时，单晶所处的生长区间是最上层的生长区间，单晶在该生长区间沿轴向生长。本发明专利技术生长的单晶的实际形状可以预知。

Automatic growth method and system for zone melting crystal

The invention discloses a method and system for automatic growth zone crystal, the method comprises the following steps: the growth stage in automatic shoulders when single crystal is larger than the diameter of a layer of circular growth interval under the bottom diameter and less than the diameter of the bottom surface, the single crystal growth interval is the cone layer the growth in the interval; single crystal growth has been configured interval growth parameters of growth; the growth parameters including at least a polycrystalline drop speed and heating power, respectively according to the configured function to adjust the relationship between crystal growth according to the growth interval has been configured for growth; the growth angle refers to the angle between the round table the bus and the bottom surface; when the crystal diameter reaches the target value, automatically switch to the diameter growth stage, at this time, the single crystal growth interval is the growth interval on top, single The crystal grows along the axial direction in the growth zone. The actual shape of the single crystal grown by the present invention is predictable.

【技术实现步骤摘要】
【国外来华专利技术】PCT国内申请，说明书已公开。

【技术保护点】
PCT国内申请，权利要求书已公开。

【技术特征摘要】
【国外来华专利技术】PCT国内申请，...

【专利技术属性】
技术研发人员：刘和松，陈辉，张立杰，伍月爽，尚锐刚，周冰，杨凯，高辉，
申请(专利权)人：北京京运通科技股份有限公司，北京天能运通晶体技术有限公司，
类型：发明
国别省市：北京,11