The utility model belongs to the field of analog integrated circuits, in particular to an I_V circuit of an infrared receiving module, which can effectively reduce the PSRR (power supply rejection ratio) of the circuit at the front end of the circuit and improve the performance of the circuit, including an operational amplifier, whose inverse input end is connected with the output end, and the output end of the operational amplifier is connected with an adjustable resistor R1 and a photoelectric diode sequentially. The two ends of the adjustable resistor R 1 are voltage signal output terminals respectively. Its characteristics include the source end of the MOS PM0 and the MOS PM1, the source end of the MOS PM0 and the source end of the MOS PM1, the current source end connected with the current source end, the bulk end connected with the resistance R 2 end, the gate end connected with the ground, the other end of the current source connected with the resistance VDD, the drain end of the MOS PM1 ground, and the drain end connected with the MOS PM0. Operational amplifier's normal phase input and capacitor C0 one end, capacitor C0 the other end grounded.
【技术实现步骤摘要】
红外接收模块的I-V电路
本技术属于模拟集成电路领域,具体为一种红外接收模块的I-V电路。
技术介绍
现在的电子产品的功能越来越多,红外遥控也就成为了许多产品中的一个功能。红外遥控发射的信号频率为38KHz的红外光,而I-V电路是红外接收模块的最前端部分,是把光电二极管接受红外光后产生的电流信号转换成电压信号的电路,见图1所示。I-V电路的性能会直接影响红外接收模块的性能。传统的I-V电路如图2所示,产品的外围电路变多导致系统电源变的越来越复杂,电源上不同频率分量的纹波也越来越多,这些纹波会影响红外接收模块的输出波形,导致输出有杂波。
技术实现思路
针对上电路性能差的问题,本技术提供了一种红外接收模块的I-V电路,其在电路前端可以有效的减小电路的PSRR(电源抑制比),提高电路的性能。其技术方案是这样的:一种红外接收模块的I-V电路,其包括运算放大器,所述运算放大器的反相输入端与输出端相连,所述运算放大器的输出端顺次连接可调电阻R1和光电二极管,所述可调电阻R1两端分别为电压信号输出端,其特征在于,其还包括MOS管PM0和MOS管PM1,所述MOS管PM0和所述MOS ...
【技术保护点】
1.一种红外接收模块的I‑V电路,其包括运算放大器,所述运算放大器的反相输入端与输出端相连,所述运算放大器的输出端顺次连接可调电阻R1和光电二极管,所述可调电阻R1两端分别为电压信号输出端,其特征在于,其还包括MOS管PM0和MOS管PM1,所述MOS管PM0和所述MOS管PM1的源端相连后连接电流源一端、bulk端相连后连接电阻R2一端、栅端相连后接地,所述电流源另一端与所述电阻另一端均连接电源VDD,所述MOS管PM1的漏端接地,所述MOS管PM0的漏端连接所述运算放大器的正相输入端和电容C0一端,所述电容C0另一端接地;所述MOS管PM0和所述MOS管PM1均为PMOS管。
【技术特征摘要】
1.一种红外接收模块的I-V电路,其包括运算放大器,所述运算放大器的反相输入端与输出端相连,所述运算放大器的输出端顺次连接可调电阻R1和光电二极管,所述可调电阻R1两端分别为电压信号输出端,其特征在于,其还包括MOS管PM0和MOS管PM1,所述MOS管PM0和所述MOS管PM1的源端相连后...
【专利技术属性】
技术研发人员:张南阳,马辉,
申请(专利权)人:无锡思泰迪半导体有限公司,
类型:新型
国别省市:江苏,32
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