一种低温制备大块致密高纯单相Y2SiO5陶瓷块体材料的方法技术

技术编号:1472604 阅读:272 留言:0更新日期:2012-04-11 18:40
本发明专利技术涉及高纯Y↓[2]SiO↓[5]新陶瓷材料的制备技术,具体为一种低温制备大块致密高纯单相Y↓[2]SiO↓[5]陶瓷材料的方法。在原料Y↓[2]O↓[3]和SiO↓[2]混合物中加入添加剂LiYO↓[2],添加剂的含量为Y↓[2]O↓[3]、SiO↓[2]和LiYO↓[2]总质量的0.2~10.0%。混合均匀后,进行煅烧,煅烧温度为1250℃~1600℃,煅烧时间为1~5小时,得到高纯单相Y↓[2]SiO↓[5]粉末。粉末经球磨得到超细粉后,装入高强钢模具中单向冷压或进行冷等静压成型,得到相对密度为45~65%的生坯,在高温空气炉或氧气炉中进行无压烧结,烧结温度为1100~1600℃、烧结时间为0.5~2.5小时,得到的成品密度为理论密度的85~100%。本发明专利技术可以在相当低的温度下制备出具有高纯度的单相的大块致密的Y↓[2]SiO↓[5]陶瓷材料,可以作为高温结构材料、抗氧化性保护涂层等,在航空、航天方面有着广泛的应用前景。

Method for preparing bulk compact and high-purity single-phase Y2SiO5 ceramic block material at low temperature

The invention relates to a preparation technology of high purity Y: 2 SiO: 5 new ceramic materials, in particular to a method for preparing low temperature bulk dense high-purity single-phase Y: 2 SiO: 5 ceramic materials. In the case of raw materials Y 2 O: 3 and SiO: 2 mixture additive LiYO down 2, the content of additive for Y: 2 O: 3, SiO: 2 and LiYO: 2 of the total mass of 0.2 ~ 10%. After mixing, calcining, calcining temperature of 1250 DEG to 1600 DEG C, calcination time is 1 ~ 5 hours, to obtain high purity single-phase Y down 2: SiO 5 powder. The powder obtained by ball milling powder after loading high strength steel mould in unidirectional cold pressing or cold isostatic pressing, get the relative density is 45 ~ 65% green, in high temperature air or oxygen furnace furnace in pressureless sintering, the sintering temperature is 1100 to 1600 DEG C, the sintering time is 0.5 ~ 2.5 hours, the the theory of product density density of 85 ~ 100%. The invention can be at a relatively low temperature preparation of bulk dense single phase with high purity by Y: 2 SiO: 5 ceramic materials, can be used as high temperature structural materials, oxidation protective coating, has a broad application prospect in aviation, aerospace.

【技术实现步骤摘要】

【技术保护点】
一种低温制备大块致密高纯单相Y↓[2]SiO↓[5]陶瓷材料的方法,其特征在于:制备过程由两步组成,先制备Y↓[2]SiO↓[5]陶瓷粉料,在原料Y↓[2]O↓[3]和SiO↓[2]混合物中加入添加剂LiYO↓[2],Y↓[2]O↓[3]和SiO↓[2]的摩尔比例为1∶(0.7~1.5),添加剂LiYO↓[2]的含量为Y↓[2]O↓[3]、SiO↓[2]和LiYO↓[2]总质量的0.2~10.0%;混合均匀后进行煅烧,煅烧温度为1250℃~1600℃,煅烧时间为1~5小时,得到高纯单相Y↓[2]SiO↓[5]粉末,粉末经球磨得到超细粉后,再将粉料成型得到生坯进行无压烧结,烧结温度为1100~1...

【技术特征摘要】

【专利技术属性】
技术研发人员:周延春孙子其李美栓
申请(专利权)人:中国科学院金属研究所
类型:发明
国别省市:89[中国|沈阳]

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