A method for calibrating temperature-sensitive electrical parameters is described in the following steps: (1) short-circuiting the control electrode and current of the device under test; (2) heating current is passed between the current inflow electrode and current outflow electrode of the device under test to measure the voltage between the control electrode and current outflow electrode of the device under test; (3) removing the control electrode and current current current of the device under test. The short circuit between the input pole and the current outflow pole is to apply voltage between the control pole and the current outflow pole, and the added voltage is the voltage between the control pole and the current outflow pole measured in the previous step; (4) the measurement current is introduced between the current inflow pole and the current outflow pole to adjust the measurement current, and the voltage between the current inflow pole and the current outflow pole is large enough to satisfy the requirement that the voltage between the current inflow pole and The power consumption produced by measuring current is small enough; (5) The voltage of control electrode and current outflow electrode obtained by step (2) and step (4) the measured current is used to calibrate the temperature sensitivity of the voltage of current inflow electrode and current outflow electrode of the device under test, and the temperature sensitive electric parameter curve is obtained.
【技术实现步骤摘要】
一种温度敏感电参数标定方法
本专利技术涉及一种功率半导体器件的温度敏感电参数标定方法及结温测量方法。
技术介绍
热敏感电参数(TSEP)法是功率半导体器件结温测量中使用最普遍的一类方法。热敏感电参数指的是与温度存在一定函数关系的器件电参数,通过事先标定热敏感电参数与温度的关系,即可通过测量热敏感电参数来反算器件结温。功率半导体器件进行热阻测量和耐久性试验时,均需通过热敏感电参数法来间接测量结温。为了避免产生额外的温升,一般情况下TSEP均是小测量电流(≤100mA)流过器件产生的电压信号。常用的热敏感电参数包括漏源电压、集电极-发射极饱和电压、阈值电压、二极管正向电压等。对于硅基单极器件,如场效应晶体管,由于正向导通电阻小,小测量电流产生的漏源电压极其微弱,小于10mV,很难精确测量,因此一般不采用漏源电压作为热敏感电参数,而是选择幅值较高的阈值电压或体二极管正向电压作为热敏感电参数。但是对于某些非硅基单极器件,如碳化硅基(SiC)场效应晶体管,由于其栅氧层存在显著的陷阱充放电特性,导致器件参数受温度、电流以及栅极电压的影响而发生严重漂移,实际测量过程中TSEP不再符合事先标定的函数关系,因此使用现有的热敏感电参数测量SiC基场效应管的结温存在较大误差。
技术实现思路
本专利技术的目的是克服现有技术无法精确测量某些电参数漂移显著的器件,如碳化硅基场效应晶体管结温的缺点,提出一种温度敏感电参数标定方法。本专利技术也适用于电参数漂移并不显著的硅基器件。本专利技术施加低的控制极电压和高的测量电流,从而产生高的电压信号,以克服现有方法产生的电压信号较为微弱,无法精确测 ...
【技术保护点】
1.一种温度敏感电参数标定方法,其特征在于:所述的温度敏感电参数标定方法包括以下步骤:(1)将被测器件的控制极和电流流入极短路;(2)被测器件的电流流入极和电流流出极间通入加热电流,测量此时被测器件的控制极与电流流出极电压;(3)解除被测器件的控制极和电流流入极间的短路,在控制极和电流流出极间施加电压,所加电压值为前一步骤测得的控制极与电流流出极电压;(4)电流流入极和电流流出极间通入测量电流,调节测量电流大小,同时满足电流流入极与电流流出极电压足够大,而测量电流所产生的功耗足够小;(5)分别使用步骤(2)得到的控制极与电流流出极电压和步骤(4)得到的测量电流,对被测器件的电流流入极与电流流出极电压进行温度敏感性标定,得到温度敏感电参数曲线。
【技术特征摘要】
1.一种温度敏感电参数标定方法,其特征在于:所述的温度敏感电参数标定方法包括以下步骤:(1)将被测器件的控制极和电流流入极短路;(2)被测器件的电流流入极和电流流出极间通入加热电流,测量此时被测器件的控制极与电流流出极电压;(3)解除被测器件的控制极和电流流入极间的短路,在控制极和电流流出极间施加电压,所加电压值为前一步骤...
【专利技术属性】
技术研发人员:张瑾,仇志杰,张二雄,
申请(专利权)人:中国科学院电工研究所,
类型:发明
国别省市:北京,11
还没有人留言评论。发表了对其他浏览者有用的留言会获得科技券。