场效应晶体管结构及其制作方法技术

本发明专利技术实施例公开了一种场效应晶体管结构及其制作方法，该场效应晶体管结构包括：底栅电极；底栅介质层；纳米条带沟道层，所述纳米条带沟道层是由多个平行间隔开的双层石墨烯纳米条带构成，所述纳米条带沟道层覆盖于所述底栅介质层的上表面，且与所述底栅介质层的上表面接触；源极和漏极；顶栅介质层；顶栅电极。本发明专利技术实施例提供的场效应晶体管结构及其制作方法，能够在不牺牲器件开态电流的情况下，有效地减少栅介质电荷中心的影响，使器件能够有较好地关断，提升器件开关比。

Structure and fabrication of field effect transistors

The embodiment of the invention discloses a field effect transistor structure and its fabrication method. The structure of the field effect transistor includes a bottom gate electrode, a bottom gate dielectric layer and a nanostrip channel layer, which is composed of a plurality of parallel spaced double-layer graphene nanostrips. The nanostrip channel layer covers the upper surface of the bottom gate dielectric layer, and the nanostrip channel layer is said to be connected with the bottom gate dielectric layer. Upper surface contact of bottom gate dielectric layer; source and drain; top gate dielectric layer; top gate electrode. The structure and fabrication method of the field effect transistor provided in the embodiment of the invention can effectively reduce the influence of the charge center of the gate dielectric without sacrificing the open current of the device, so that the device can be turned off better and the switch ratio of the device can be increased.

【技术实现步骤摘要】
【国外来华专利技术】PCT国内申请，说明书已公开。

【技术保护点】
PCT国内申请，权利要求书已公开。

【技术特征摘要】
【国外来华专利技术】PCT国内申请，...

【专利技术属性】
技术研发人员：秦旭东，徐慧龙，张臣雄，
申请(专利权)人：华为技术有限公司，
类型：发明
国别省市：广东,44