SiC Mosfet ultra high frequency drive circuit: the PWM signal is input from the IN tube foot to the original auxiliary power supply module, and the GND pipe foot is connected to the original auxiliary power module as the reference point of the electrical signal. The original auxiliary power module transfers the received signal to the original transceiver and provides the auxiliary power for the original transceiver. The original transceiver and the vice side receive and receive the transceiver. The auxiliary power supply module is provided by the auxiliary power module, the auxiliary power module is provided by the auxiliary power module. The auxiliary power module selects the output channel according to the received signal. The transmission signal is transmitted to the level displacement circuit and the level displacement circuit output signal when the SiC MOSFET is opened. To the bootstrap charge pump and the gate charge push-pull amplifier, the gate charging push-pull amplifier passes after the signal of the bootstrap charge pump, makes the GH pin supply the positive gate voltage. When the SiC MOSFET is turned off, the transmission signal is switched to the gate to turn off the push pull amplifier, the gate is turned off the push-pull amplifier, and the VISO GL pins are turned off during the closing process. Provide negative voltage and gate discharge. Compared with the prior art, the utility model has the advantages of simple design and small volume. The optocoupler isolation and overcurrent protection and reduced gate voltage advanced soft shutdown function have effectively reduced the equipment failure rate. Driving power is strong driving current. The delay time of the circuit signal is short, and the working frequency is high. The bootstrap charge pump is used to realize the rail to rail drive of the push-pull circuit, which enhances the driving ability and ensures the driving stability. The realization of SiC MOSFET high frequency soft open, soft shutdown function, effectively protect the working elements to enhance the stability of components.
【技术实现步骤摘要】
SiCMosfet超高频驱动电路
本技术涉及感应加热
,具体涉及SiCMosfet超高频驱动电路。
技术介绍
20世纪80年代后期,随着MOSFET、IGBT、SIT等器件相继出现,电力电子技术得到再次发展。到21世纪初期感应加热装置已经开始大范围使用IGBT和MOSFET做为主要的功率开关器件。国内外IGBT主要用于大功率装置,而MOSFET主要用于高频装置。通常把感应电源按频率范围可划分为:低频(500Hz以下)、中频(1KHz~10KHz)、超音频(20KHz~40KHz),高频(40KHz~200KHz)、超高频(200KHz以上)。感应加热技术在国外发展比较迅猛,尤其是欧美和日本等国家,他们在感应加热领域对于高频和超高频产品的开发方面基本上代表了感应加热技术上的最高应用水平。国外某些公司利用IGBT设计的感应加热装置可以把功率做到超过1000KW同时频率达到50kHZ;利用MOSFET可以设计出功率几千瓦同时频率可达到500kHZ以上,甚至儿兆赫兹的感应加热装置。但是为了做大功率设备,国内外MOSFET应用都是小体积小封装的功率管几百只甚至上千只并联使用,这样使用就造成设备体积庞大,设备功率损耗巨大,设计复杂,故障率高等诸多问题。
技术实现思路
为解决上述技术问题,本技术提供SiCMosfet超高频驱动电路。本技术的技术方案具体为:SiCMosfet超高频驱动电路:PWM信号由IN管脚输入至原方辅助电源模块,GND管脚接入原方辅助电源模块作为电信号参考点,原方辅助电源模块把接收到的信号传输至原方收发器并为原方收发器提供辅助电源,原方收发器与副方收发 ...
【技术保护点】
SiC Mosfet超高频驱动电路,其特征在于:PWM信号由IN管脚输入至原方辅助电源模块,GND管脚接入原方辅助电源模块作为电信号参考点,原方辅助电源模块把接收到的信号传输至原方收发器并为原方收发器提供辅助电源,原方收发器与副方收发器进行双向通信,副方收发器传输信号至副方辅助电源模块,副方收发器辅助电源由副方辅助电源模块提供,副方辅助电源模块根据接收到的信号选择输出通路,SiC MOSFET开通时传输信号至电平位移电路,电平位移电路输出信号至自举电荷泵和门极充电推挽放大器,门极充电推挽放大器在接受到自举电荷泵信号后导通,使GH管脚提供正门极电压,SiC MOSFET关断时,传输信号至门极关断推挽放大器,门极关断推挽放大器导通,使VISO‑GL管脚在关断过程中提供负电压并对门极放电。
【技术特征摘要】
1.SiCMosfet超高频驱动电路,其特征在于:PWM信号由IN管脚输入至原方辅助电源模块,GND管脚接入原方辅助电源模块作为电信号参考点,原方辅助电源模块把接收到的信号传输至原方收发器并为原方收发器提供辅助电源,原方收发器与副方收发器进行双向通信,副方收发器传输信号至副方辅助电源模块,副方收发器辅助电源由副方辅助电源模块提供,副方辅助电源模块根据接收到的信号选择输出通路,SiCMOSFET开通时传输信号至电平位移电路,电平位移电路输出信号至自举电荷泵和门极充电推挽放大器,门极充电推挽放大器在接受到自举电荷泵信号后导通,使GH管脚提供正门极电压,SiCMOSFET关断时,传输信号至门极关断推挽放大器,门极关断推挽放大器导通,使VISO-GL管脚在关断过程中提供负电压并对门极放电。2.如权利要求1所述的SiCMosfet超高频驱动电路,其特征在于:所述原方收发器和副方收发器进行光耦隔离,所述IN管脚与原方辅助电源模块之间设置输入信号隔离光耦。3.如权利要求1所述的SiCMosfet超高频驱动电路,其特征在于:还包括原方核心逻辑供电监控模块,核心逻辑供电监控辅助电源模块和原方电源(VCC)、故障输出端口(ER)连接。4.如权利要求3所述的SiCMosfet超高频驱动电路,其特征在于:原方...
【专利技术属性】
技术研发人员:翁全璞,段晓强,洪涛,
申请(专利权)人:郑州科创电子有限公司,
类型:新型
国别省市:河南,41
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